Micron Technology, Inc. (Nasdaq: MU) and the Trump Administration on Thursday announced Micron’s plans to expand its U.S. investments to about $150 billion in domestic memory manufacturing and $50 billion in R&D (research and development), creating an estimated 90,000 direct and indirect jobs.
Micron’s investment includes its ongoing plans for a megafab in the town of Clay, per the company’s announcement. Micron expects to begin ground preparation in Clay later this year following completion of state and federal environmental-review processes. The company expects its second Idaho fab to come online before the first fab in Clay.
Micron says it plans to invest an additional $30 billion beyond the company’s prior plans. That includes building a second leading-edge memory fab in Boise, Idaho; expanding and modernizing its existing manufacturing facility in Manassas, Virginia; and bringing advanced packaging capabilities to the U.S. to enable “long-term growth” in high bandwidth memory (HBM), which is essential to the AI (artificial intelligence) market.
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Additionally, Micron is announcing a planned $50 billion domestic R&D investment, “reaffirming its long-term position as the global memory-technology leader.”
“Micron’s U.S. memory manufacturing and R&D plans underscore our commitment to driving innovation and strengthening the domestic semiconductor industry,” said Sanjay Mehrotra, chairman, president and CEO of Micron Technology. “This approximately $200 billion investment will reinforce America’s technological leadership, create tens of thousands of American jobs across the semiconductor ecosystem and secure a domestic supply of semiconductors — critical to economic and national security. We are grateful for the support from President [Donald] Trump, [U.S. Commerce] Secretary [Howard] Lutnick and our federal, state and local partners who have been instrumental in advancing domestic semiconductor manufacturing.”
Additional details
Micron’s approximately $200 billion broader U.S. expansion vision includes two leading-edge high-volume fabs in Idaho, up to four leading-edge high-volume fabs in the town of Clay, the expansion and modernization of its existing manufacturing fab in Virginia, advanced HBM packaging capabilities and R&D to drive American innovation and technology leadership.
These investments are designed to allow Micron to meet expected market demand, maintain share, and support Micron’s goal of producing 40 percent of its DRAM (dynamic random-access memory) in the U.S. The co-location of these two Idaho fabs with Micron’s Idaho R&D operations will drive economies of scale and faster time to market for leading-edge products, including HBM, the company said.
Micron has already achieved key construction milestones on its first Idaho fab with DRAM output scheduled to begin in 2027. The second Idaho fab will increase Micron’s production of DRAM in the U.S., serving growing market demand fueled by AI. Micron will continue to manage its supply growth consistent with market conditions.
Following the completion of the second Idaho fab, Micron plans to bring advanced HBM packaging capabilities to the U.S. Additionally, Micron has finalized a $275 million CHIPS Act direct funding award supporting its investment to expand and modernize its Manassas, Virginia facility, which will begin this year. This investment will onshore Micron’s 1-alpha DRAM node, reinforcing the company’s ongoing commitment to key sectors including industrial, automotive, defense and aerospace, and medical devices.
“President Trump has made it clear that the time to build in America is now,” Secretary of Commerce Lutnick, said in the Micron announcement. “In partnership with the Department of Commerce, Micron is announcing a $200 billion semiconductor manufacturing and R&D investment to bring the full spectrum of memory chip production back to the United States. Micron’s planned investment will ensure the U.S. advances its lead across critical industries like AI, automotive, and aerospace & defense.”
